2SB1308 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v collector current i c -3 a collector current(pulse) i cp *-5 a collector power dissipation p c 0.5 w junction temperature tj 150 storage temperature t stg -55to+150 * single pulse, pw=10ms electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-50a -30 v collector-emitter breakdown voltage bv ceo i c =-1ma -20 v emitter-base breakdown voltage bv ebo i e =-50a -6 v collector cutoff current i cbo v cb =-20v -0.5 a emitter cutoff current i ebo v eb =-5v -0.5 a collector-emitter saturation voltage h fe v ce =-2v, i c =-0.5a 82 390 dc current transfer ratio v ce(sat) i c =-1.5a,i b =-0.15a -0.45 v transition frequency c ob v ce =-6v, i e =50ma, f=100mhz 120 mhz output capacitance f t v cb =-20v, i e =0a, f=1mhz 60 pf h fe classification marking rank p q r hfe 82 180 120 270 180 390 bf features low saturation voltage, typically v ce(sat) = -0.45v (max.) at i c /i b = -1.5a / -0.15a. excellent dc current gain characteristics. product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
|
